STS Multiplex ICP Plasma Etcher

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Description

The tool has been moved into the warehouse for storage located in Asia.

The materials processed: Si, SiO2,

Al2O3, Ta, Ti and the process gases: CF4, SF6, Ar, O2, H2. 


Specs are shown below  

STS Multiplex ICP Plasma etcher

  • ICP Process chamber
  • Coil RF generator and matching unit (Coil)
  • Electrode RF generator and matching unit (Platen)
  • Phase shift controller
  • VAT Isolation valve
  • Turbo pump
  • Dry pump
  • Gas box
  • Cluster multiplex prime power distribution cabinet
  • PPD Combined with the process chamber electronics
  • Materials processed: Si, SiO2, Al2O3, Ta, Ti
  • Process gases: CF4, SF6, Ar, O2, H2
  • Power supply: 208 VAC, 3 Phase, 60 Hz, 8.32 kVA
  • 2001 vintage. 


Missing parts:

  • (2) Control modules
  • Exhaust pipe
  • Matching box
  • MAG / Phase detector
  • Load port


Specifications

ManufacturerSTS
ModelMultiplex ICP
Year2001
ConditionUsed
Stock NumberGOD08062020
WAFER SIZEask