STS Multiplex ICP Plasma Etcher

The tool has been moved into the warehouse for storage located in Asia.

The materials processed: Si, SiO2,

Al2O3, Ta, Ti and the process gases: CF4, SF6, Ar, O2, H2. 

Specs are shown below  

STS Multiplex ICP Plasma etcher

• ICP Process chamber
• Coil RF generator and matching unit (Coil)
• Electrode RF generator and matching unit (Platen)
• Phase shift controller
• VAT Isolation valve
• Turbo pump
• Dry pump
• Gas box
• Cluster multiplex prime power distribution cabinet
• PPD Combined with the process chamber electronics
• Materials processed: Si, SiO2, Al2O3, Ta, Ti
• Process gases: CF4, SF6, Ar, O2, H2
• Power supply: 208 VAC, 3 Phase, 60 Hz, 8.32 kVA
• 2001 vintage. 

Missing parts:

• (2) Control modules
• Exhaust pipe
• Matching box
• MAG / Phase detector
• Load port