STS Multiplex ICP Plasma Etcher

STS Multiplex ICP Plasma Etcher
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Description
The tool has been moved into the warehouse for storage located in Asia.
The materials processed: Si, SiO2,
Al2O3, Ta, Ti and the process gases: CF4, SF6, Ar, O2, H2.
Specs are shown below
STS Multiplex ICP Plasma etcher
- ICP Process chamber
- Coil RF generator and matching unit (Coil)
- Electrode RF generator and matching unit (Platen)
- Phase shift controller
- VAT Isolation valve
- Turbo pump
- Dry pump
- Gas box
- Cluster multiplex prime power distribution cabinet
- PPD Combined with the process chamber electronics
- Materials processed: Si, SiO2, Al2O3, Ta, Ti
- Process gases: CF4, SF6, Ar, O2, H2
- Power supply: 208 VAC, 3 Phase, 60 Hz, 8.32 kVA
- 2001 vintage.
Missing parts:
- (2) Control modules
- Exhaust pipe
- Matching box
- MAG / Phase detector
- Load port
Specifications
Manufacturer | STS |
Model | Multiplex ICP |
Year | 2001 |
Condition | Used |
Stock Number | GOD08062020 |
WAFER SIZE | ask |