8inch Si Wafer

- Growth Method: CZ

- Type: P/B

- Crystal Orientation: <100>±1

- Notch: SEMI Std.

- Notch Orientation: 110+/-1 degree

- Resistivity: 1-100Ω-㎝

- Thickness: 725±25㎛

- TTV: ≤5㎛

- Warp: ≤30㎛

- Bow: ≤30㎛

- Particle: >0.2㎛@≤15ea

- Surface: Single Side Polished

- Laser-mark: None

Metal Impurities (at/cm2)

Fe、Cu、Zn、Cr、Ca、Ni、K、Al、Na: <1E10

Q'ty:approx. 3000-5000pcs after qualifications

COA required

Neutral packing,1 label for each cassette.

Dummy wafers 8 inch