1995 AS Associates Heatpulse AG8108

The following are the operating specifications for the Heatpulse® 8108 system.

* Wafer handling: automatic serial processing, using standard cassettes.

* Throughput: Process dependent, approximately 80 wafers per hour (in a null cycle) without flat-finder.

* Wafer sizes: 5 inches, 6 inches, and 8 inches (standard).

* Ramp-up rate: Programmable, 1 - 180°C per second.

* Steady-state duration: 1 - 600 seconds per step.

* Ramp-down rate: Programmable, 1 - 180°C per second. Ramp-down rate is temperature and radiation dependent, maximum 150°C per second.

* Recommended steady-state temperature range: 400 - 1200°C.

* ERP temperature accuracy: +3°C to -7°C, when calibrated against an instrumented thermocouple wafer (ITC).

* Temperature repeatability: ±3°C or better at 1150°C wafer to wafer. (Repetition specifications are based on a 100-wafer set.)

* Temperature uniformity: ±5°C across an 8-inch wafer at 1150°C. (This is a 1-sigma deviation from 100-angstrom oxide uniformity.) For a titanium silicidation process, no more than 1.5 percent increase to uniformity during the first anneal at 650 - 700°C.OEM Model Description

Rapid Thermal Processor

The AG Associates Heatpulse 8108 system is a single-wafer, cassette-to-cassette rapid thermal processor, capable of processing in inert or corrosive ambients. The system is built for the production environment.