VARIAN E500 EHPI HIGH ENERGY ION IMPLANTER – 200MM

Manufacturer: Varian

Model: E500 EHPI (EHPi-500)

Manufacture Date: December 2005

Equipment Type: High Energy Ion Implantation System

Wafer Size: Up to 200mm

EQUIPMENT DESCRIPTION

Varian E500 EHPI high energy ion implantation system designed for semiconductor wafer processing.

The EHPi-500 platform combines high beam current at conventional implant energies with high energy operation up to 780 keV, making it suitable for deep well, retrograde well and high energy semiconductor device applications.

The system features a Windows-based control platform, four configured gas lines and a comprehensive range of productivity and process assurance options.

SYSTEM CONFIGURATION

• Model: E500EHPI
• Manufacture Date: 01 December 2005
• Software Version: v15.11.10
• Computer Model: E11297484
• Secondary Computer: No
• Maximum Extraction Voltage: 70 kV
• 60 kV Mirror Power Supply: Yes
• Productivity Plus (PP+): Yes
• Auto Deceleration Function: Yes
• Vaporizer Power Supply and Assembly: Yes
• Wafer Clamp: Electrostatic Clamp (E-Clamp)

VACUUM PUMP CONFIGURATION

• Source Turbo Pump: Adixen ATH1600M
• Analyzer Turbo Pump: Agilent TwisTorr 304 FS
• Scanner Turbo Pump: Pfeiffer HiPace 700 P
• Load Lock Turbo Pump: CTI OB4F
• Chamber Cryogenic Pump: CTI OB10F

TECHNICAL SPECIFICATIONS

Wafer Handling

• Supported Wafer Sizes: 100mm, 125mm, 150mm and 200mm
• Maximum Throughput: 210 wafers/hour (200mm, mechanical limit, 6 scans)

Implant Energy and Beam Performance

• High Energy Operation: 520–780 keV
• Maximum Beam Current (31P+): 3,300 µA
• Maximum Beam Current (75As+): 2,800 µA
• Maximum Beam Current (11B+/BF2+): 2,000 µA
• Dose Range: 1E11 to 1E16 ions/cm²
• Dose Uniformity: 1σ ≤ 0.5%
• Wafer-to-Wafer Repeatability: 1σ ≤ 0.5%
• Beam Parallelism: ≤ 0.5° (40–250 keV, drift or acceleration)
• Ion Mass Resolution: M/ΔM > 85 FWHM

Process Angles

• Wafer Tilt: 0–60° (±1°)
• Wafer Orientation: 0–360° (±2°)

GAS BOX CONFIGURATION

Four configured gas lines:

1. SDS AsH3 (Arsine)
2. SDS PH3 (Phosphine)
3. SDS BF3 (Boron Trifluoride)
4. Argon

INSTALLED OPTIONS AND FEATURES

• Beam Purity Check
• Configuration Upload to Host
• Productivity Plus (PP+)
• Remote Recipe Editor
• Beam Drift Monitor
• LX Productivity
• Tilt Angle Assurance
• Windows Control System
• Roplat Rotation Verification Interlock
• Auto Deceleration
• 60 kV Mirror Power Supply
• Vaporizer Power Supply and Assembly
• Electrostatic Wafer Clamp

ADDITIONAL SPARE PARTS

The following additional parts are listed with the equipment:

• New Tilter – P/N E11077380
• Additional Preventive Maintenance (PM) Parts
• Scanner Components
• Source Bushing
• Source Components
• Mirror Assembly
• Acceleration Column
• Faraday Setup Cup
• Graphite Components

KNOWN MISSING PARTS

The following components are identified as missing:

1. Travelling Faraday – P/N E11052920
2. Wafer Handling Drive – P/N E19007100 (Quantity: 2)
3. Gate Valve – Part Number Not Specified

FACILITY REQUIREMENTS

Electrical

• Power Supply: 120/208 V, 3 Phase
• Rated Power: 75 kVA
• Typical Load: 45 kVA

Utilities

• Cooling Water Pressure: 60–150 PSIG
• Dry Nitrogen Supply: Required
• Compressed Air Supply: Required

Physical Dimensions

• Height: 96 inches (2,438 mm)
• Width: 127.64 inches (3,242 mm)
• Depth: 197.33 inches (5,012 mm)
• Weight: 36,737 lbs (approximately 16,664 kg)

APPLICATIONS

• High Energy Ion Implantation
• Deep Well Implantation
• Retrograde Well Formation
• Semiconductor Device Fabrication
• High Energy Doping Processes
• 200mm Semiconductor Manufacturing