1996 AMAT Centura HDP→5300Omega

As is, where is

2ch:SiO2 D/E CH-A/B

Process Contact window dry etching

Wafer Size 8”

Wafer Shape Notch

Wafer Cassette 8" Plastic Miraial

SMIF Interface NO

Equipment composition 1.Equipment body

2.Primary AC box

3.Rf Gen

4.Heat exchanger/Chiller

1.Equipment body

1-1 L/L Chamber 2Module (right L/L,Left L/L) 1L/L-1Casset

Cassette platform Vertical movement Compatible cassette:Fuluoroware A-192

Material Aluminium

1-2 TM Chamber 1Module

Wafer transfer robot Magnet coupling method High vacuum compatible wafer transfer robot

Wafer transfer by rotation and expansion / contraction

Material Aluminium

1-3 Wafer orienter Mounting position Position F

Compatible with orientation flat and notch type wafers

Flat, notch position and center position detection function by CCD sensor

1-4 Process Chamber Chamber concept Multi-turn antenna Inductively coupled plasma source

Variable bias RF power(Independent control of ion density and ion energy)

Wafer holding mechanism Electrostatic chuck

Wafer cooling system Helium Pressure Controlle

Temperature control Closed loop temperature control with thermocouple

Material Aluminium

1-5 Gas Panel MFC Model AERA FC-770AC

Gas Type(8Line+N2) 1 C2F6:50

2 C3F8:50

3 C4F8:20

4 N2:200

5 N2:200

6 O2:1000

7 Ar:200

8 -

N2

1-6 Secondary AC box specifications

200VAC,3P-Δ 4Line,110A,50/60Hz Primary AC Box~Secondary AC Box

Main circuit breaker

24V Power supply

EMO

100V Service outlet

1-7 Control system MasterFab Central Controller

Object-oriented interface

Software R264

Hardware SUN MICRO SYSTEM SPARC STATION 5Work station

1-8 Other RF Matching box High-speed matching by solid state with no moving parts

Dual RF matching system

2.Primary AC box 200VAC,3P-Δ 4Line,225A,50/60Hz Primary side~Primary AC Box

Power distribution to each facility module of this system

Main circuit breaker

24V Power supply

EMO

Earth leakage relay system Operates for leakage of 100 mA or more

100V Service outlet

3.RF Gen ETO 80S-03

Dual RF system Source RF:Frequency 2.0Mhz Max Power 4000W

Bias RF:Frequency 1.8Mhz Max Power 2000W

RF oscillation power supply:200/208VAC,3P-Δ 60A,50/60Hz

Cooling method:Self-water cooling system with DI water circulation

4.Heat exchanger/Chiller BAY VOLTEX :

TEMPRYTE LT-HRE 1650-4580-MC-

DC-AM-FLT

Chiller:Coolant circulation system(GaldenHT-200)

Heat exchanger:Coolant circulation system(GaldenHT-70)