2009 Rena Electroplating Wet Bench

1. General

− Currently set for 6" wafers

- Capable of 8" wafers

− 1 Copper (Cu) Plating Chamber

- 1 Tin (Sn) Plating Chamber

− 1 QDR Rinsing Module

2. Main Body

− 1 mainbody made of fire retardant white PPs

− Dimensions: width ca. 1400 mm, depth ca. 1550 mm, height ca. 2050 mm

3. Cu ECD Process Unit

3.1 Process Chamber

− Preparation for the use of a Cu plate as soluble anode

− Drag-out tank with manual valves for filling / draining of DIW installed in front of the process chamber

− All relevant process parameters for optimizing the deposition uniformity, such as plating current, electrolyte flow, temperature, rotation speed are adjustable and controlled by the PLC. The distance between process chamber and wafer is mechanically adjustable. All means for optimization of the uniformity are included in

the basic configuration

3.2 Chamber lid

− Chamber lid with rotation function

− Rotation 10 – 50 1/min

− Quick lock device for easy mounting of the substrate holder

3.3 Circulation system

− Storage tank, volume >25l

− Electrolyte volume in the system 15 – 25l

− 4 sensors for checking the liquid level in the tank

− Automatic refilling of DI-water

− 2 PT 100 units for temperature control ±1°

− Teflon heater installed in the storage tank

− Temperature 30 - 65°C

− Heat exchanger installed in the storage tank for connection to external cooling water system, lower temperature limit depending on cooling water

− OPTION: External heating / cooling device for temperature 15 - 60°C

− Manual filling of the electrolyte chemistry

− Circulation system consisting of:

  - Pump, max flow rate > 30 l/min with DIW without filter

  - Flow meter, min flow rate > 5 l/min

  - 10“ filter housing, 1 filter with 1 μm pore size included

4. Cu ECD Process Unit

4.1 Process chamber

− Preparation for the use of a Sn plate as soluble anode

− Distance between cathode and anode variable, max ca. 200 mm

− Force line aperture for 6” wafers

− Drag-out tank with manual valves for filling / draining of DIW installed in front of the process chamber

− All relevant process parameters for optimizing the deposition uniformity, such as plating current, electrolyte flow, temperature, rotation speed are adjustable and controlled by the PLC. The distance between process chamber and wafer is mechanically adjustable. All means for optimization of the uniformity are included in

the basic configuration

4.2 Chamber lid

− Chamber lid with rotation function

− Rotation 10 – 50 1/min

− Quick lock device for easy mounting of the substrate holder

4.3 Circulation system

− Storage tank, volume >25l

− OPTION (not included): storage tank volume 50l

− Electrolyte volume in the system 15 – 25l

− 4 sensors for checking the liquid level in the tank

− automatic refilling of DI-water

− 2 PT 100 units for temperature control ±1°

− Teflon heater installed in the storage tank

− Temperature 30 - 65°C

− Manual filling of the electrolyte chemistry

− Circulation system consisting of:

− Pump, max flow rate > 40 l/min with DIW without filter

− Flow meter, min flow rate > 5 l/min

− 10“ filter housing, 1 filter with 1 μm pore size included

5. Rinsing module

− With quick dump rinse (QDR)

− 1 DIW-gun

− Resistivity check at the drain

− N2-gun

6. Electrical control and software

− Cu: 1 forward/reverse pulse power supply by PLATING ELECTRONIC, type pe86, working range 20V / 5A effective / 15A pulse, ripple < 0.3% of max. effective current (=9mA)

− Sn: 1 forward/reverse pulse power supply by PLATING ELECTRONIC, type pe86, working range 20V / 3A effective / 15A pulse, ripple < 0.3% of max. effective current (=9mA)

− PLC

− Software with operator, process, and service modes

− Password protection

− Storage capacity for up to 20 recipes (per plating module) with 5 process steps per recipe

- Vintage 2009