2009 Aixtron G4 GaN

2009 Aixtron G4 GaN

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Description

Voltage: 208V-3ph

Process: MOCVD

Process EPI

Wafer Size 4

Process: GaN


Process Gas 1 Process Gas 2 Process Gas 3

NH3 H2 SiH4


Packing List Description Qty

1 Glove Box 1

2 GMS 1

3 Main Pump 1

4 Particle Filter 1

5 Cable Box1 1

6 RF Generator 1

7 Transformer 1

Specifications

ManufacturerAixtron
ModelG4 GaN
Year2009
ConditionUsed
Stock NumberBM3517