FEI Helios 450S Dual Beam

FEI Helios Nanolab 450

Process Type: FA SEMs/TEMs/Dual Beams

Status: Refurbished

Specifications:

Electron Source – TFE Elstar electron column with UC monochromator

Ion Source – Tomahawk

• Landing Voltage

– 50 V - 30 kV SEM

– 500 V - 30 kV FIB

• STEM resolution

– 0.8 nm

• SEM resolution

– Optimal WD

0.8 nm @ 15 kV

0.8 nm @ 2 kV

0.9 nm @ 1 kV

1.5 nm @ 200 V with beam decleration

– Coincident WD

0.8 nm @ 15 kV

0.9 nm @ 5 kV

1.2 nm @ 1 kV

• Ion beam resolution at coincident point

– 4.5 nm @ 30 kV using preferred statistical method

– 2.5 nm @ 30 kV using selective edge method

• EDS resolution

– < 30 nm on thinned sample

• Stage

– 5 axis all piezo motorized

– 100 mm XY motion

– Loadlock (80 mm max. diameter)

– Omniprobe

• Sample types

– Wafer pieces, packaged parts, TEM

– grids, whole wafers up to 100 mm

• Max. sample size

– 80 mm diameter with full travel

• User interface

– Windows® GUI with integrated SEM, FIB, GIS, and simultaneous patterning and imaging mode

• GIS

– available and on request

• Lift out

– Omniprobe 200.2