Tepla 600-AL (autoload) plasma asher

230v, 13 amps, 50/60hz

1731 hours

- Semi-Automatic RF Plasma System 

- Can process up to 200mm wafers

- Used for photoresist stripping and surface cleaning, as well as etching silicon and its compounds

- Chamber Size: 245mm diameter, 380mm depth

- Chamber Material: ceramic

- ENI RF Generator: 0-600 Watt, 13.56 MHz

- Gases: 4 channels controlled by 4 MFCs 

- Leybold D65B Vacuum Pump

- Dimensions: 740mm x 624mm x 701mm + connections

- Electrical: 230V, 50/60Hz, 15A, 2kW

- Photoresist stripping

- Surface cleaning after storage

- Surface cleaning after processes using oil pump or diffusion pump vacuum

- Surface cleaning as part of photolithography after wet developing

- Stripping of photoresist layers after etching

- Removal of organic passivating layers and masks

- Etching of glass and ceramic

- Etching of SiO2, Si3N4, Si

- Removal of polyimide layers.