1997 STS Multiplex ICP Deep Reactive Ion Si Etcher

Condition: “As is”  

STS Deep Reactive Ion Si Etcher (Bosch Process)

Vintage 1997

200mm

The STS Multiplex DRIE uses the Bosch process for

etching silicon deep and anisotropic. In addition to

the platen RF power supply for RIE the system also

has an ICP RF source for independently controlling

the plasma density from the DC Bias.

The system uses a water cooled electrode and He

backside flow to keep the sample cool. This system

is designed to etch a 200 mm wafer.

Gases:

C4F8 1000 sccm

SF6 1000 sccm

Ar 50 sccm

O2 100 sccm

C4F8 500 sccm

SF6 100 sccm