Riber MBE Epitaxy System

RIBER MBE Epitaxy System Overview

System Identification

Manufacturer: RIBER Type: Molecular Beam Epitaxy (MBE) System Configuration: Research /

pilot-scale epitaxy platform

Core Function

Ultra-high vacuum epitaxial growth system used for precise deposition of crystalline thin films,

primarily for compound semiconductors (III-V materials such as GaAs, InP, etc.).

Vacuum & Chamber Architecture

- UHV growth chamber with multi-port geometry - Cryogenic and turbomolecular pumping - Load

lock / transfer capability (typical for Riber systems) - Base pressure in 10 Torr range

Key Subsystems Identified

- Effusion cell power supplies (multi-channel rack) - RF plasma source (Advanced Energy Cesar RF

generator) - Hiden Analytical system (likely RGA or mass spec) - SPECS control electronics -

Cryogenic temperature controller - Beam equivalent pressure (BEP) monitoring controls

Deposition Capabilities

- Molecular Beam Epitaxy (MBE) - Elemental and compound semiconductor growth - Ultra-precise

thickness and composition control - Layer-by-layer epitaxial deposition

Process Control

- Independent source temperature control (effusion cells) - RF plasma for reactive species (e.g.,

nitrogen, oxygen) - In-situ monitoring via RGA / diagnostics - Automated recipe control via

integrated electronics racks

Typical Applications

- Semiconductor device R

&D; (GaAs, InGaAs, AlGaAs, etc.) - Quantum structures (quantum wells,

dots) - Optoelectronics (lasers, LEDs, detectors) - Advanced materials research

System Characteristics