2003 AMAT Centura 5200 DxZ Silane

PECVD (Chemical Vapor Deposition)

Deposition Equipment

Date of Manufacture: 2003-01-01

Currently Configured for: 200mm

Asset HDD not included

Wafer Size (inches):8 

Install Type:Stand Alone

Software Version:B30A1

Date of Last PM:2025/3/5

The system is on-line

No Clean Room Manuals

No Standard Manuals

No OEM Audit Available

The equipment can Produce Wafers AS IS

All Cables are Present

Mainframe Type:Centura (Common)

Chamber Process:

Position A:DxZ Silane(PE Silane)

Position B:DxZ Silane(PE Silane)

Position C:DxZ Silane(PE Silane)

Position D:DxZ Silane(PE Silane)

Position E :Multi-Slot Cooldown(Cooldown)

Position F :Wafer Orienter(Orienter)

Loadlock Type :Wide body

Wafer Mapping:Std 

Wafer Slide Sensor

Bolt-On-SMIF:ASYST / LPT2200

Robot Type:HP 

Blade Type:Ceramic

Transfer Lid Hoist

Wafer on Blade Sensor:Enhanced (OTF)

SBC Version:V452

Remote Service Monitors:No

GEMS

Heater Type:Ceramic

Dual Manometer Type:20:1000T

Endpoint Detector:Yes

Cover Plate:Dimpled

Blocker Plate Part#:0021-54545

Faceplate Part#:0021-00041

Chamber Clean:Plasma 

No Astex Remote Microwave Clean

RF Generator Details:

Position A:AE(RFG-2000-2V-007)

Position B:AE(RFG-2000-2V-007)

Position C:AE(RFG-2000-2V-007)

Position D:AE(RFG-2000-2V-007)

AMAT Heat Exchanger:Steelhead 

Quantity Required*1 

Gas Delivery Type:SLD

Gas Panel Exhaust:Left

Gas Box Configuration:

1.HE-5000-HORIBA(SEC-Z512MGX)

2.C4F8-500-HORIBA(SEC-Z512MGX)

3.NH3-50-HORIBA(SEC-Z512MGX)

4.SiH4-100-HORIBA(SEC-Z512MGX)

5.SiH4-500-HORIBA(SEC-Z512MGX)

6.NH3-300-HORIBA(SEC-Z512MGX)

7.AR-5000-HORIBA(SEC-Z512MGX)

8.N2-5000-HORIBA(SEC-Z512MGX)

9.N2O-500-HORIBA(SEC-Z512MGX)

10.N2O-3000-HORIBA(SEC-Z512MGX)